Electrical Characteristic and Microstructure of Ternary Alloy TaxCoyNz Thin Films Deposited by Reactive Sputtering

Reactive magnetron sputtering by using Ta-Co target under Ar/N2 mixtures were used to prepare TaxCoyNz thin films on silicon substrates. This work examined the deposition nitrogen partial pressure depend on crystal structure, surface morphology and electrical properties of the films by using X-ray diffractometry, electron microscopy, and four-point probe measurement after rapid thermal annealing the deposited films at an elevate temperature. The findings indicated that the nitrogen content monotonic increases from 46.4 to 48.6 at.% as the nitrogen flow ratio varies from 2.5 to 50% and the thermal drive out of the nitrogen atoms in tantalum nitrides.