由CVD法調控Bi2O2Se生長並應用於次世代電子元件

Controlled Growth of Bi2O2Se by CVD and Application in Next-Gen Electronic Device

硒氧化鉍（Bi2O2Se）作為一種具有前景的二維材料，具有高載流子遷移率、可調能隙及良好環境穩定性等特性，成為次世代電子元件的有力候選。本研究利用化學氣相沉積（CVD）技術，實現大面積且可控制的Bi2O2Se薄膜合成，系統性揭示不同生長參數對薄膜品質的影響，基於此，本研究建立一套有助於擴展Bi2O2Se面積與提升薄膜可重現性的製程策略，提供後續應用的重要技術依據。最後，將所製備之薄膜作為電晶體通道層材料，並進行電性測試，展現其輸出、轉移特性曲的特性。

Bismuth oxyselenide (Bi2O2Se) is a promising two-dimensional material with high carrier mobility, a tunable bandgap, and excellent environmental stability, making it a strong candidate for next-generation electronic devices. In this study, large-area and controllable Bi2O2Se thin films were synthesized using chemical vapor deposition (CVD). The effects of different growth parameters on the film quality were systematically investigated. Based on these results, this study establishes a fabrication strategy for expanding the growth area of Bi2O2Se and improving the reproducibility of thin-film synthesis, providing an important technical foundation for future