後摩爾時代下奈米碳管於先進半導體技術之應用與挑戰

Applications and Challenges of Carbon Nanotubes in Advanced Semiconductor Technologies for the Post-Moore Era

隨著半導體元件持續朝向高密度整合、高速運算與低功耗方向發展，傳統矽基材料與銅互連架構逐漸面臨尺寸微縮、電阻上升、電遷移效應以及散熱能力不足等限制，使後摩爾時代之新世代材料與異質整合技術成為目前半導體研究的重要方向。奈米碳管因具有一維奈米結構、高載子傳輸能力、高熱導率、高機械強度與優異電流承載特性，被視為極具潛力之次世代功能材料。近年來，奈米碳管於半導體元件、先進互連、熱管理、先進封裝以及極紫外光微影保護膜等領域皆受到高度關注，並展現其於先進半導體技術中的應用潛力。本文系統性探討奈米碳管於先進半導體技術中的應用發展與相關挑戰，內容涵蓋奈米碳管場效電晶體、先進互連技術、熱傳導與熱介面材料、先進封裝，以及極紫外光微影保護膜等重要方向。同時，本文亦針對奈米碳管於半導體製程整合中所面臨之材料純化、手性控制、接觸電阻、界面穩定性與大面積均勻成長等問題進行分析。此外，本文進一步探討真空薄膜製程、化學氣相沉積與低溫製程技術於奈米碳管整合中的關鍵角色，以作為未來次世代半導體材料與製程技術發展之參考。

As semiconductor devices continue to evolve toward high-density integration, high-speed computing, and low-power operation, conventional silicon-based materials and copper interconnect architectures are gradually encountering critical limitations, including device scaling, increased electrical resistance, electromigration, and insufficient heat dissipation capability. Consequently, emerging materials and heterogeneous integration technologies for the post-Moore era have become major research directions in advanced semiconductor technologies. Owing to their one-dimensional nanostructure, high carrier transport capability, excellent thermal conductivity, superior mechanical strength, and outstanding current-carrying capacity, carbon nanotubes have been regarded as one of the most promising next-generation functional materials. In recent years, carbon nanotubes have attracted significant attention in semiconductor devices, advanced interconnects, thermal management, advanced packaging, and extreme ultraviolet lithography pellicles, demonstrating substantial potential for advanced semiconductor applications. This article systematically reviews the applications and challenges of carbon nanotubes in advanced semiconductor technologies, including carbon nanotube field-effect transistors, advanced interconnect technologies, thermal conduction and thermal interface materials, advanced packaging, and extreme ultraviolet lithography pellicles. In addition, key challenges associated with semiconductor process integration, including material purification, chirality control, contact resistance, interface stability, and large-area uniform growth, are also discussed. Furthermore, the critical roles of vacuum thin-film processes, chemical vapor deposition, and low-temperature processing technologies in carbon nanotube integration are addressed, providing perspectives for the future development of next-generation semiconductor materials and processing technologies.