| 英文摘要 |
The electrochemical behaviors of Al during chemical mechanical polishing (CMP) process were investigated. The effects of pH and H2O2 on the chemical dissolution rate at static state or under polishing condition were explored. The influences of polishing pressure and platen speed on the changes of electrochemical behavior and removal rate were also studied. The experimental results showed that Al exhibited stable passivation in the slurry investigated at stress free condition. Both the corrosion potential and the current density were increased by reducing the pH and/or by adding H2O2 in the slurry. Under polishing condition, however, passivation could no longer exist. The removal rate was decreased slightly while the dissolution current density was increased by increasing the pH of the slurry. The adding of H2O2 caused an increase of corrosion potential by 500mV but without affecting the current density. The experimental results also showed that either platen speed or polishing pressure exerted no effect on the potentiodynamic polarization behavior under polishing condition, demonstrating the negligible effect of mechanical factor on the electrochemical reaction. Furthermore, the results clearly showed that though Preston’s equation was not obeyed the removal rate was still increased with increasing polishing pressure and platen speed. The XPS analyses reveal that the formations of Al2O3 and AlPO4 were prevailed when the slurry pH was increased. |