Pulsed laser deposition of AIN/GaN superlattices

Most optoelectronic devices based on III nitrides such as AlN, GaN and InN are designed as superlattice structures. AlN/GaN superlattices have recently attracted considerable attention due to their potential applications for high power transistors and ultraviolet emitters. Besides their potential applications, these structures are also appealing from a purely physical point of view. In this study, AlN/GaN superlattices with different periods were grown on sapphire (0001) substrates by Nd:YAG pulsed laser deposition (PLD). The thickness and roughness of each layer of the AlN/GaN superlattices were characterized by grazing-incidence X-ray reflectivity (GIXRR). Photoluminescence (PL) spectroscopy and the spectrometer were used to characterize the optical properties.