高亮度高可靠度膠質黏著型（Glue bonding, GB）AlGaInP LED

本論文中採用一不吸光的透明黏接層來黏接一具吸光GaAs基板的AlGaInp LED與一透明基板Sapphire，接著將吸光的GaAs基板除去，來形成一具透明基板的AlGaInp LED，由於所使用的膠質黏著技術是在低溫下進行，不至破壞原LED磊晶結構而影響其特性，同時所使用的透明基板Sapphire具備相當好的穿透性，因此大幅提升LED的發光效率。我們所做成的GB AlGaInP LED比傳統GaAs吸光基板AlGaInP LED發光效率提升將近2倍，在20mA的操作電流下可達40 lm/w的發光效率，操作電壓在2.1V左右。同時在70mA與85 C 1000h連續操作下，其輸出光強度與操作電壓的變化率也都維持相當穩定的。

In the present paper, we use non-absorption transparent adhesive layer to bond AlGaInP epi-wafer and the transparent sapphire substrate together. Thereafter, the absorption GaAs substrate is removed to form of AlGaInP LED transparent substrate. Because the glue bonding technology is carried on under the low temperature condition, it does not destroy the original LED epitaxial structures to affect its characteristic. At the same time, used transparent sapphire substrate has quite well light transparency which can largely increases LED luminous efficiency. Compared to traditional AlGaInP LED GaAs wafer, luminous efficiency of our GB AlGaInP LED promotes nearly 2 times. Luminous efficiency can reach 40 lm/w under the 20mA forward current. Its forward voltage is about 2.1 V. Meanwhile, under 70mA with 85 蚓 and 1000h continuous operation, its output luminous intensity and variation of forward voltage also both maintains quite stably.