800℃條件下成長p型氮化鋁銦鎵/氮化鎵雙重披覆層的氮化物發光二極體

許多不同p型披覆層的氮化物發光二極體（LEDs）已經製備。我們發現在800℃下成長披覆層的氮化物LED，其表面型態是粗糙的，因為氮化鎵在側向的成長速度較慢。而且也發現20mA時，800℃成長的p型氮化鋁銦鎵/氮化鎵雙重披覆層LED順向電壓只有3.05V。除此之外，藉著使用這種800℃下成長的p型氮化鋁銦鎵/氮化鎵雙重披覆層，我們可以得到高輸出功率以及長的元件壽命。

GaN-based light emitting diodes (LEDs) with various p-cap layers were prepared. It was found that surface morphologies of the LEDs with 800°C-grown cap layers were rough due to the low lateral growth rate of GaN. It was also found that 20 mA forward voltage of the LED with 800°C-grown p-AlInGaN/GaN double cap layer was only 3.05 V. Furthermore, it was found that we could achieve a high output power and a long lifetime by using the 800°C-grown p-AlInGaN/GaN double cap layer.