射頻電漿活化分子束磊晶成長之III族-氮化物材料

將N2經由電漿活化用來作為射頻分子束磊晶技術成長III-V氮化物材料的氮原子來源，在(0001)面（c-plane）的藍寶石（sapphire）基板及氮化鎵（template）基板上成長氮化鎵（GaN）薄膜。而根據反射式高能量電子束繞射圖形來獲得藍寶石基板及氮化鎵基板的表面氮化步驟。並以V/III流量比作為成長氮化鎵薄膜的生長條件。且在以有機金屬氣相磊晶所成長之氮化鎵（template）基板上成長分佈式布拉格反射鏡。並以薄膜結構及表面狀態作為氮化鎵薄膜品質的分析。

Using the nitrogen gas as nitrogen atom source to grow III-V nitride material by plasma-assisted molecular beam epitaxy (MBE) on 2 inch sapphire and GaN template are reported. The surface nitridation step of the sapphire substrate and GaN template were monitored by reflection high energy electron diffraction (RHEED). Distributed bragg reflectors on the GaN template were grown and characterized.