A Low Leakage Current in SiGe metro-junction FET Using by ICP Dry Etching Process

In this paper, the use of inductively coupled plasma (ICP) dry etching technique on the mesa etching to fabricate SiGe-based devices is studied. Because ICP can generate high-density plasma under low pressure, independently control plasma density as well as ion bombardment energy, a better anisotropic etching profile and a reduced critical dimension loss can be obtained. Experimental results show that the SiGe doped-channel field-effect transistor using ICP mesa etching has higher breakdown voltage lower leakage current, higher transconductance, and larger current drivability as compared to the device fabricated using wet mesa etching.