| 英文摘要 |
Using strained SiGe channel can improve the crucial p-type FETs performance parameters because of the high hole mobility. In our previous study, p-type SiGe Single-Doped Channel MESFETs (SDC-FETs) have been fabricated. However, the transconductance of SDC-FETs is reduced drastically with the increasing forward gate bias. In this paper, p-type SiGe Multi-Doped Channel NIESFETs (NIDC-FETs) are successfully fabricated and compared with SDC-FETs. |
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