Low Frequency Noise of MBE-grown ZnSSeTe PIN Photodiode

ZnSSeTe PIN photodiode was grown on p-type GaAs (100) substrate by molecular beam epitaxy. Dark current-voltage was measured. It was found that the turn on voltage was 0.7 V and the breakdown voltage was 16V. When the applied reverse bias was greater then 3V, the appearance of 1/f noise was observed. The noise equivalent powers (NEP)for the bias of -3V, -4V, and -5V were calculated to be 141pW, 347pW, and 620pW, respectively. The corresponding normalized detectivities (D*) were 1.4×1010, 5.7×109, and 3.2×109 cmHz1/2W-1, respectively. Such values of D* are reasonably good compared to nitride-based photodiodes and commercial silicon photodiodes.