多重量子井P-N接面之光檢測器

在本實驗中我們研製出半透明鎳/金（Ni/Au）電極之氮化銦鎵／氮化鎵（InGaN/GaN）多重量子井（Multi-Quantum Well）p-n接面光檢測器並描繪其特性。對多重量子井p-n接面光檢測器施加0.4V反向偏壓時，發現崩潰電壓可高達20伏特、光電流和喑電流比約為105。在施加0.1V和3V反向偏壓時，波峰響應在波長為380nm時分別為1.28 A/W和1.76 A/W而且，研究發現氮化銦鎵/氮化鎵多重量子P-N接面光檢測器之增益，很可能是由於與氮化鎵GaN材料本身之載子生命週期有關。另外光檢測器之低頻雜訊符合1/f雜訊模式。當光檢測器偏壓在-3V及入射光波長為380nm時，其響應度大約為1.76 A/W。在頻寬為500Hz時，其相對應的雜訊等效功率（NEP）和正規化檢測度分別為6.34×10-13W和4.45×1011 cmHz0.5W-1。

InGaN/GaN multi-quantum well (MQW) p-n junction photodiodes with semi-transparent Ni/Au electrodes were fabricated and characterized. The InGaN/GaN MQW p-n junction photodiode exhibits a 20 V break down voltage and a high responsivity at 380 nm was 1.28 A/W and 1.76 A/W with a 0.1 V and 3 V applied reverse bias, respectively. At low frequency, the noise exhibits the 1/f type noise. For our 400 400 µm2 device, given bias of -3 V, at bandwidth of 500 Hz, the corresponding noise equivalent power (NEP) and normalized detectivity D* are calculated to be W and 4.45×1011 cmHz0.5W-1, respectively.