以光激化學氣相沉積系統成長二氧化矽作為砷化鎵金氧半電容之絕緣層

二氧化矽薄膜成功地成長於n型砷化鎵基板上藉由光激化學氣相沉積法使用氘燈作為激發光源，在外加1 MV/cm之電場下，我們發現二氧化矽薄膜之電容漏電流密度於剛沉積完與400℃回火絕緣層兩種情形下分別為1.74×10-6與1.97×10-7 A/cm2，另外我們也發現研製之鋁／二氧化矽/砷化鎵金氧半場效電晶體（MOSFETs）電容之介面狀態密度（Dit）是很小的。

SiO2 films were successfully deposited onto n-GaAs substrates by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. With a 1 MV/cm applied electric field, it was found that the SiO2 films leakage current densities were 1.74×10-6 and 1.97×10-7 A/cm2, respectively, for the capacitors with as-deposition and 400°C annealed insulator layers. The interface state densities, Dit, were also found to be small for the fabricated Al/photo-CVD-SiO2/GaAs metal-oxide-semiconductor field effect transistors (MOSFETs) capacitors.