分子束磊晶成長之磷氮化銦鎵之有序度效應研究

本篇論文探討在砷化鎵基板上以分子束磊晶成長（MBE）之磷氮化銦鎵（GaInNP）磊晶層的晶格有序度的探討，藉由Ar+雷射激發之光激發螢光譜（PL）及高解析度雙晶繞射儀（HR-XRD）探討不同氮（N）含量對GaInNP晶品質的影響。在GaInp中加入少量N可使得磊晶層晶格匹配至GaAs基板。隨著N含量的增加，PL光譜產生紅移且半高寬會隨之增加。我們將PL以及Raman光譜的組合用以區分有序度效應以及化合物組成的變化。實驗結果也顯示非輻射複合缺陷中心會隨著有序度效應而增加，使得磊晶層的光特性變差。最後藉由分析不同極化面的Raman光譜以判定不同氮含量之下的有序度效應。

Nitrogen-induced spontaneous ordering effect in novel dilute-nitride material Ga0.4In0.54Pl-xNx (x from 0 to 0.01) grown by metal organic vapor phase epitaxy have been investigated. The optical properties and the spontaneous ordering effect were characterized by Photoluminescence (PL), polarized micro-Raman spectra and high-resolution x-ray rocking curve (XRC). Incorporating proper amount of nitrogen into Ga0.46In0.54P can be lattice-matched to GaAs. As incorporating nitrogen, the PL peak red shifts, indicating that the band gap reduction and the line width broadening increases due to alloy scattering. We combined PL and micro-Raman spectra to distinguish the ordering induced band gap changes from the compositional changes. However, with the increasing nitrogen content, the non-radiative centers and deep level defects were induced by ordering effect, which indicates the results in poor PL performance. By analyzing the different polarization Raman signal, the influence on the degree of ordering of different nitrogen content is also discussed.