With increasing in the screen size, and the demand for high-definition image quality and high resolution for optoelectronic industry, various chemicals or physical processes are constantly evolving and improving. The etching process is performed for a film deposit before the lithography process, and cleans the area without the photoresist by using chemical or physical reactions. It can be divided into dry etching and wet etching depending on the characteristics and manner of operation. Wet etching belonging to the reaction between liquid and solid phases is a chemical process using an etching solution for removing the substrates without covered by the photoresist region and the corrosive residuals from the solution after the etching reaction is completed. TFT-LCD industry has a safety concern of the reactive materials due to the process demands for many hazardous chemicals, which may cause harmful, fire or explosion incidents in case of wrong operation. The facility supply systems in the factory are using various reactive chemicals that should establish safe management and protection. Moreover, chemical supply operation systems need to be carefully planned in order to prevent possible failures from tanks or pipelines, and improper handling or mixing of hazardous materials. This study tested two etching solution (H2O2/acids and NaClO3) which are widely used in electronics factory for wafer cleaning or thin-film etching. However, the acidic and oxidants substances, may be encountered thermal hazard. Thermal dynamic scanning of DSC (Differential Scanning Calorimetry) was used to analyze exotherm and incompatibility of two etching solution and reacting with themselves and H2SO4, HCl and HNO3. The calorimetric data, such as exothermic temperature (T0), the peak temperature during exotherm (Tp), heat of reaction (ΔHd), were evaluated the reaction kinetics and self-heating model.