通過射頻磁控濺鍍在玻璃基板上沉積並透過真空熱退火製作出低電阻和高 導電率的氧化鋅鋁薄膜，我們研究氧化鋅鋁薄膜的電學、光學和熱性能，可以發 現到真空 500 度 1 分鐘的熱退火氧化鋅鋁薄膜在可見光 (380~ 平均穿透率 為 84.58%84.58%，該薄膜有最低的片電阻 (29.84 29.84Ω/sq.)。 通過電源供應器接在兩端給 予固定 9V 電壓，使 氧化鋅鋁薄膜 發熱， 溫升前的薄膜溫度為 22 ˚ C ，在 200 秒時 薄膜的溫升達到約 55 ˚ C ，此外該氧化鋅鋁薄膜的熱量分布均勻。

In this study,The aluminum doped zinc oxide thin films with low resistance and high conductivity is deposited on a glass substrate by radio frequency magnetron sputtering and vacuum annealing.We study the electrical, optical and thermal properties of the zinc-aluminum oxide thin films.It can be found that the annealed AZO thin films in vacuum at 500 degrees for 1 minute has average transmittance of 84.58% in visible light (380~780nm), and the thin films has the lowest sheet resistance (29.84Ω/sq.).The power supply is connected to both ends to give a fixed voltage of 9V, so that the AZO thin films is heated. The AZO thin films temperature before the temperature rise is 22 ˚C, and the temperature rise of the thin films reaches about 55 ˚C in 200 seconds. The thin films heat is distributed evenly.