原子層沉積技術於先進半導體製程與超潔淨製造之應用與發展

Atomic Layer Deposition for Advanced Semiconductor Manufacturing and Ultra-Clean Processing

隨著半導體元件持續朝向高密度整合、高效能運算與低功耗方向發展，傳統薄膜沉積技術於奈米尺度與三維結構中逐漸面臨厚度控制、界面品質與高深寬比結構覆蓋能力等挑戰。在此背景下，具備原子級厚度控制、高均勻性、高步覆率以及低溫沉積能力之原子層沉積（Atomic Layer Deposition，ALD）技術，已逐漸成為先進半導體製程中的重要核心技術之一。本文針對ALD技術於先進半導體製程中的應用與發展進行探討，內容涵蓋先進邏輯元件、三維快閃記憶體、後段金屬互連、先進封裝以及二維材料元件等方向，並分析ALD於高介電常數閘極介電層、金屬閘極、阻障層與界面工程中的重要角色。此外，隨著先進半導體製程對製程潔淨度與良率要求持續提升，ALD於超潔淨製造中的應用亦逐漸受到重視。本文進一步探討電漿環境下腔體材料之劣化機制與粒子污染問題，並分析氧化釔（Y2O3）保護層結合ALD高緻密性薄膜特性於降低粒子污染與提升腔體穩定性之潛力。最後，本文亦針對低溫ALD、選擇性ALD、超潔淨製程與智慧化製程控制等未來發展方向進行討論。整體而言，ALD技術已逐漸由傳統薄膜沉積方法，演變為支撐次世代半導體製程、異質整合與超潔淨製造之重要平台技術。

As semiconductor devices continue to evolve toward high-density integration, high-performance computing, and low-power operation, conventional thin-film deposition technologies are increasingly challenged by thickness control, interface quality, and conformal coating capability in nanoscale and three-dimensional structures. Under these circumstances, Atomic Layer Deposition (ALD), featuring atomic-scale thickness control, excellent uniformity, superior step coverage, and low-temperature deposition capability, has become one of the key enabling technologies in advanced semiconductor manufacturing. This article reviews the applications and recent developments of ALD in advanced semiconductor technologies, including advanced logic devices, three-dimensional NAND flash memory, back-end-of-line interconnects, advanced packaging, and two-dimensional material-based devices. The critical roles of ALD in high-k gate dielectrics, metal gates, barrier layers, and interface engineering are also discussed. In addition, as advanced semiconductor manufacturing becomes increasingly sensitive to contamination and yield degradation, the role of ALD in ultra-clean processing has attracted growing attention. This review further discusses plasma-induced chamber degradation and particle contamination mechanisms, as well as the potential of Y₂O₃protective coatings combined with high-density ALD thin films for reducing particle generation and improving chamber stability. Finally, future development trends of ALD technologies, including low-temperature ALD, area-selective ALD, ultra-clean processing, and intelligent process control, are presented. Overall, ALD has evolved from a conventional thin-film deposition technique into a critical platform technology for next-generation semiconductor manufacturing, heterogeneous integration, and ultra-clean processing.