以新穎之低溫水熱–化學電池法於鍍氮化鋯膜矽基材上製備鋯酸鋇膜

Synthesis of BaZrO3 Films on ZrN-coated Si by a Novel Low Temperature Hydrothermal-galvanic Couple Method

本研究利用新穎之低溫水熱-化學電池法於鍍氮化鋯膜矽晶片上製備鋯酸鋇膜。氮化鋯膜是以中空陰極放電式電漿離子法（HCD-IP）鍍著於矽晶片上，氮化鋯膜之厚度約為660nm。將鍍氮化鋯膜矽晶片置於2 M氫氧化鈉與0.5 M醋酸鋇溶液中，在低於100℃的溫度條件下進行鋯酸鋇膜之製備。由X光繞射之分析結果顯示，在70℃反應24小時即可生成立方相鋯酸鋇。由場發射掃描式電子顯微鏡觀察表面與橫截面形貌，發現隨反應時間增加，鋯酸鋇晶粒與厚度有增加趨勢。以90℃反應8小時後，所生成鋯酸鋇之膜厚約0.8μm，而反應15小時後，大部分之氮化鋯膜均已轉變為鋯酸鋇膜，膜厚可達2μm。本研究亦對鋯酸鋇膜之成長與反應溫度與時間之關係做探討。

The objective is to prepare barium zirconate (BaZrO3, BZO) films on ZrN-coated Si by a novel low temperature hydrothermal-galvanic couple method. Zirconium nitride films were deposited on Si substrates by hollow cathode discharge plasma ion plating (HCD-IP) and were 660 nm in thickness. ZrN-coated Si specimens were then soaked in Ba(CH3COO)2 and NaOH mixed alkaline solutions with a galvanic couple setup below 100 ℃ for fabrication of BZO films. X-ray diffraction results show that cubic BZO films were successfully prepared on ZrN/Si at 70 ℃ for 24 h. The morphology of obtained BZO films was examined by field-emission scanning electron microscopy. Grain size and thickness of BZO films increased with increasing temperature. The thickness of BZO films could reach about 1 μm at 90 ℃ for 8 h and 2μm for 15 h, indicating that most of ZrN films were converted into BZO films. The film morphology and thickness were dependent significantly on reaction temperatures and times.