氮化鋯鍍膜在氮氫混合氣氛退火後之劣化研究

Degradation of ZrN Films Annealed in Forming Gas

本研究主要探討以非平衡磁控濺射鍍著於（100）矽基材上之氮化鋯薄膜，在氮氫混合氣(N2/H2=9) 下退火後之劣化現象。退火溫度自300至1200℃，由X光繞射分析結果顯示，在700 ℃以上，會生成單斜晶系（monoclinic）的氧化鋯。另以掃描式電子顯微鏡觀察表面形貌，發現在400℃時，會開始產生許多大小約5-10 µm之圓形凸狀物，部分並已破裂，另外達800℃時則出現眾多不規則較小之凸狀物，到達1200℃此凸狀物變得更緻密。在低溫形成的凸狀物是由於退火時應力鬆弛所致，至於高溫生成緻密不規則凸狀物的原因，主要由於氧化的關係。

The objective of this research is to investigate the degradation of ZrN film annealed in forming gas (N2/H2=9). The films were deposited onto (100) Si substrate by unbalanced magnetron sputtering. Annealing was conducted in the temperature range of 300-1200 . X-ray diffraction results showed that monoclinic ZrO2 appeared above 700 . Changes in the morphology of the films were examined by a scanning electron microscope. Large blisters with the size of 5~10 m appeared above 400 . Some blisters have a broken surface. Many small irregular blisters showed up above 800 . The formation of those large blisters was due to stress relaxation. As for the small blisters, they were essentially resulted from oxidation.