n-型（100）矽單晶的光電化學腐蝕研究

Photo-Electrochemical Corrosion on the n-type (100) Silicon Single Crystal

本論文以光電化學方法，在n型（100）單晶矽上蝕刻獲得均匀之微米級孔洞。研究方法採用直流電陽極動態極化法，在氟化物溶液中，探討添加劑、照光強度等參數對n-型（100）單晶矽的陽極極化曲線的影響，進而在各種蝕刻液中找出最佳蝕刻參數。動態陽極極化結果顯示：n-型（100）單晶矽試片在照光下，於C及D蝕刻液中均可得到較快的腐蝕速率。而定電位蝕刻研究結果則顯示：孔洞生成速率以C蝕刻液最為快速，D蝕刻液其次，但使用D蝕刻液所蝕刻出孔洞壁表面形態較平滑且均勻。

Photo-electrochemical etching of n-type (100) silicon single crystal in fluoride solution has been investigated. The etching rate of the silicon is enhanced in fluoride solution ( aM ) by addition of cM CC01. The etching rate is accelerated in the presence of UV-visible light. Anodic polarization of the photo-electrochemical system etched in fluoride solution demonstrated that the etching rate is affected by various additives. The etching rate of the n-type Si(100) in solution C (containing aM HF + cM CC01 ) is faster than that in any other solutions ( A B D and E ) . The pores etched in solution D ( aM HF + dM CC02 ) show smooth morphology even the etching rate is slightly slower than in solution C.