一0.6-伏特只用金氧半場效電晶體次臨界-洩漏壓抑互補金氧半完全差動交換電容放大器

A 0.6-V MOSFET-Only Subthreshold-Leakage Suppressed CMOS Fully Differential Switched-Capacitor Amplifier

本論文提出一0.6-伏特只用金氧半場效電晶體互補金氧半完全差動次臨界洩漏壓抑低電壓交換電容放大器，並採用類比T-開關。本電路使用了基板偏壓的金氧半場效電晶體工作在空乏區以用來作為電容使用。詳細的電路在本文中被清楚的描述。此交換電容放大器運作於一輸入10kHz振幅0.12Vpp正弦信號，信號──對──全部諧波失真比可達36 dB，且消耗145.39-μW。此電路以標準TSMC 0.18um CMOS 製程製作且其面積是500μm×520μm。實驗結果及實體佈局結果證實了本設計的可行性，並滿足了本設計的需求。

This paper presents a 0.6-V MOSFET-only subthreshold-leakage suppressed CMOS fully differential switched-capacitor amplifier with an analog T-switch scheme. The circuit uses substrate-biased MOSFETs in its depletion region as capacitors linearized by a compensation technique. The circuit design of major building blocks is described herein. The experimental results demonstrate the performance of this circuit. The switched-capacitor amplifier operates with a signal-to-total harmonic distortion ratio of 36 dB for an input 10-kHz sinusoidal amplitude of 0.12 Vpp and dissipates 145.39 μW. The circuit was fabricated in a standard 0.18 μm CMOS technology with an area of 500 μm× 520 μm. The experimental results confirm the capability of compensated depletion-mode MOS capacitors and the proposed analog T-switch scheme to fulfill circuit requirements.