以凹槽式電極增進氮化鎵銦金屬-半導體-金屬光檢測器之功能

Improving In0.37Ga0.63N MSM Photodetectors by Using a Recessed-Electrode Structure

本文描述了凹槽式電極之氮化鎵銦金屬-半導體-金屬光檢測器（MSM-PD）的結構；並比較出具有凹槽式電極之光檢測器的光電流大小及其光暗電流比值均優於平面式電極之光檢測器。以波長為470 奈米之入射光波照射在外加偏壓為5 伏特之凹槽式電極光檢測器與平面式電極光檢測器上，量測其響應度分別為0.144 以及0.038 安培∕瓦特。 InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. When compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrasting ratios are both much larger for a MSM-PD with recessed electrodes. With a 5V applied bias and an incidental light wavelength of 470 nm, it was found that the measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without recessed electrodes, respectively.