多片式電漿化學氣相沉積及原子層沉積雙製程鍍膜設備

Multi-chip plasma chemical vapor deposition and atomic layer deposition dual-process coating equipment

本文介紹一多片式電漿化學氣相沉積及原子層沉積雙製程鍍膜設備，具有雙製程模組，可完成多片式薄膜沉積製程。藉由腔體內部電漿場均勻分布設計，達到多片式鍍膜均勻效果。雙製程共用氣體擴散板產生電漿反應，在五區160片M6尺寸晶圓上完成多晶矽及氧化矽薄膜的沉積，並達到良好的薄膜均勻性，藉以實現PECVD與PEALD雙製程共腔之技術建置，將可應用於高效矽晶太陽電池元件之試生產及研發。

This article introduces a multi-chip plasma chemical vapor deposition and atomic layer deposition dual-process coating equipment with dual-process mode. The set can complete the multi-chip thin film deposition process. Through the uniform distribution design of the plasma field inside the cavity, multi-chip coating can be achieved evenly. The dual process with uniform effect uses a gas diffusion plate to generate a plasma reaction, and the deposition of polycrystalline silicon and silicon oxide film can be achieved with good film uniformity on 160 wafers with M6 size , thereby realizing technology of PECVD and PEALD dual process within single chamber. The technological establishment will be applied to the trial production and research of high-efficiency silicon solar cell components.