新型X光光電子能譜儀技術應用於半導體材料與元件分析

Novel X-ray Photoelectron Spectroscopy Techniques for The Analysis of Semiconductor Materials and Devices

表面（Surface）為固態材料與外界環境交互作用的界面，可能僅佔樣品厚度的萬分一，卻是樣品與溫度、氣態蝕刻、液態腐蝕等外在因素最直接接觸且反應最劇烈之交界，做為材料的最外層，會因材料的性質與緻密程度不同而與外界產生迥異之交互作用，對於上述各種環境因子之影響極其敏感。為了瞭解材料最表面與外界環境接觸後所發生的變化，本篇文章將使用X光光電子能譜儀（X-ray Photoelectron Spectroscopy, XPS）對半導體薄膜進行電性量測；透過搭載於X光光電子能譜儀中之紫外光光電子能譜儀（UPS）與低能量反轉光電子能譜儀（LEIPS），能夠於超高真空腔體中臨場觀測材料的能帶與價帶資訊，亦可同時利用XPS之功能監控元素定量及化學組態變化；此外，本研究同時展示可調控式氣體團簇離子束（GCIB）技術應用於半導體薄膜及元件之濺射過程，以獲得其元素縱深分析結果，並對其濺射行為進行一系列探討；最後，本研究使用高能量硬X光光電子能譜儀（HAXPES）對高熵合金進行非破壞式探測，成功避免於元素定量過程以及化學價態判定時歐傑訊號所造成之干擾，獲得相較於傳統XPS更深層且精準的分析成果。

“Surface”is the interface where the solid material interacts with the surroundings. It only occupies the outermost thin film of the sample with the strongest reaction to environmental factors, such as temperature, wet/dry etching, and light. As the outermost layer of the material, different material properties cause various interactions between the specimen and the external atmosphere. To understand the changes that occur at the outermost surface of the material, in this study, we will use X-ray photoelectron spectroscopy (XPS) to examine the surface layer and sub-surface layer of the semiconductor thin films. XPS equipped with Ultraviolet photoelectron spectroscopy (UPS) and low energy inverse photoelectron spectroscopy (LEIPS) that have also been used for investigating the band structure information of the materials in the same ultra-high vacuum condition. In addition, a controllable gas cluster ion beam (GCIB) system is installed on XPS system to investigate the sputtering behavior and elemental depth profiles of various semiconductor materials. The hard X-ray photoelectron spectroscopy (HAXPES) is used to detect high entropy alloy for precise composition study without Auger signal interference. This non-destructive analysis technique provides a way to investigate interfacial layer without chemical damage caused by sputtering.