利用化學氣相沉積法於矽晶圓與藍寶石基板上合成氮化鎢奈米片材

Synthesis of Tungsten Nitride Nanosheets on Si Wafer and Sapphire via Chemical Vapor Deposition

過渡金屬氮化物(Transition Metal Nitrides, TMNs)以其高熔點、硬度、電化學穩定性和耐腐蝕性等特性而受到廣泛關注。近年來，通過選擇性蝕刻體MAX相的“A”層成功製備二維(2D) MXenes，引發了對二維金屬碳化物和氮化物的研究。然而，通過選擇性蝕刻製備的樣品在蝕刻過程中會產生缺陷和厚度分佈不勻，這些類型的2D TMNs不適用於高性能電子和光電器件應用，因其需要有較大面積(>10μm橫向尺寸)、品質和沉積在基板上的2D晶體。目前合成的2D TMNs往往以溶液相或粉末形式呈現，薄片尺寸通常較小(<10μm)。
為了解決這個問題，化學氣相沉積(Chemical Vapor Deposition, CVD)方法被提出作為合成高品質無表面基團2D TMNs的技術。在合成其他過渡金屬化合物的研究中，CVD方法已經得到了相當的成果。因此，這種方法也被用於合成氮化鎢。研究人員嘗試使用不同的前驅物配置並透過實驗參數的控制，在SiO2/Si的晶圓基材上合成出氮化鎢(tungsten nitride ,WN)，探討相關氮化鎢的物性與化學性質，並藉由各種材料分析設備確認其實際組成與結構。這項研究的目的是利用化學氣相沉積法合成氮化鎢，作為研究基礎和為下一代電子產品的發展打開一扇大門。

Transition Metal Nitrides (TMNs) have attracted extensive attention due to their high melting point, hardness, electrochemical stability, and corrosion resistance. In recent years, the successful preparation of two-dimensional (2D) MXenes by selectively etching the ''A'' layer of the bulk MAX phase has sparked research into 2D metal carbides and nitrides. However, samples prepared by selective etching suffer from defects and uneven thickness distribution during the etching process, and these types of 2D TMNs are not suitable for high-performance electronic and optoelectronic device applications need the large area (>10μm lateral dimension), good quality of 2D crystals deposited on substrates. Currently, synthesized 2D TMNs tend to be in solution phase or powder form, and the flake size is usually small (<10μm).
To solve this problem, chemical vapor deposition (Chemical Vapor Deposition, CVD) method was proposed as a technique to synthesize high-quality surface group-free 2D TMNs. In the study of synthesizing other transition metal compounds, the CVD method has achieved considerable results. Therefore, this method has also been used to synthesize tungsten nitride. The researchers tried to use different precursor configurations and controlled the experimental parameters to synthesize tungsten nitride (tungsten nitride, WN) on the SiO2/Si wafer substrate, to explore the physical and chemical properties of the related tungsten nitride, and confirm its actual composition and structure with various material analysis equipment. The purpose of this study is to synthesize tungsten nitride using chemical vapor deposition as a research basis and to open a door for the development of next-generation electronics.