氣流中斷法原子層沉積系統對於薄膜品質的影響

The Flow Rate-Interruption Atomic Layer Deposition System on Film Quality

原子層沉積是目前最具有潛力的一種半導體薄膜製備技術，其具有高均勻度、高階梯覆蓋率以及極佳的厚度控制能力。本文介紹之氣流中斷法相對於傳統的連續氣流法來說利用一個靜置時間除了增加傳統原子層沉積法各項優點的品質之外，還使得增加結晶性與降低成本有大幅改善。

Atomic layer deposition is one of the most potential technologies for semiconductor thin film fabrication. This method demonstrates high uniformity, high step coverage, and excellent thickness control ability. In this paper, we introduce the Flow Rate-Interruption method which adds soak time. As compared with traditional continuous flow method, the proposed Flow Rate-Interruption method not only increases the quality of the advantages of the traditional atomic layer deposition, but also results in a significant improvement in crystallization and cost reduction.