利用二段式常壓化學氣相沉積法在絕緣基板上合成免轉移石墨烯

Transfer-Free Synthesis of Graphene on Insulating Substrates by Two-Step APCVD

利用常壓化學氣相沉積(atmospheric pressure chemical vapor deposition)與鎳金屬催化經過兩階段升溫在二氧化矽(SiO2)上直接成長具有公分大小的免轉移石墨烯。從拉曼光譜(Raman spectrum)與大面積(12×12μm2)拉曼影像(Raman mapping)分析得知，免轉移石墨烯具有低缺陷與高均勻性(~90%單層結構)。在低溫(75 K)與室溫(300 K)的載子遷移率(carrier mobility)分別為~11300 cm2/V·s與~750 cm2/V·s，同時與溫度(T)的n次方( 2 < n < 4)呈負相關，暗示著高能量聲子(phonon)造成更多的電子散射。本研究在二氧化矽基板上實現大面積、無轉移石墨烯的成長，有望提升石墨烯相關電子元件的商用化機會。

A cm-sized transfer-free graphene was grown directly on SiO2 with a Ni-catalyzed atmospheric pressure chemical vapor deposition (APCVD) and a two-step thermal annealing process. According to Raman spectrum and a large sized (12×12μm2) Raman mapping, the transfer-free graphene shows low defects and high uniformity (~90% single-layer structure). The carrier mobility at 75 K and 300 K are ~11300 and ~750 cm2/V·s, respectively. Moreover, the carrier mobility shows the negative correlation with Tn (2