氮化物半導體發光二極體近況

本文係筆者整理一系列氮化物半導體發光二極體（LED）之近況，包括磊晶技術發展、P型氮化鎵透明歐姆電極形成技術、其他提昇亮度之製程技術及白光LED市場與未來展望，希望能對國內相關產業研發先進同仁們能有所助益。

This paper is about the recent status of nitride-based semiconductors light emitting diodes (LED) which were collected by the author. These recent conditions consist of the technical development of epitaxy, the fabrication technique of p-type GaN transparent contact layer (TCL), related process issues that can improve the light output power, the market of white LED, and the future forecast of white LED. We hope that these data can be helpful to all the advanced engineers and colleagues in the related industry in Taiwan.