氮砷化銦量子井及其在中紅外線雷射二極體之應用

本文介紹一系列不同氮含量之應變型氮砷化銦量子井的成長、結構與光學特性。我們以具備高週波射頻電漿源之氣態源分子束磊晶法成長氮砷化鎵量子井，並分析其雙晶Ⅹ光繞射圖譜、光激螢光頻譜、FESEM影像。最後我們將氮砷化銦量子井應用在雷射二極體的發光主動層上，初步製成的雷射二極體可在溫度260K達成2420nm的中紅外線振盪。

In this study, we have investigated the growth, structural and optical properties of strained InAsN/InGaAs multiple-quantum-well structures on (100) InP substrates. All samples were grown by gas-source molecular beam epitaxy. Nitrogen was added using a radio-frequency plasma source. Results from the DXRD, low-temperature photoluminescence, and cross-sectional FESEM measurements are presented and discussed. Finally, InAsN/InGaAs four-quantum-well laser diode was successfully fabricated. The device achieves laser oscillation up to 260K with an emission wavelength of 2.42 µm, and demonstrates the potential of InAsN alloy for mid-infrared applications.