使用溫度變化成長氮化物多重量子井綠光發光二極體

我們使用不同的成長溫度來成長發光二極體（light emitting diode, LED）中的InGaN/GaN多重量子井（Multiquantum well, MQW）發光層。在室溫的光激發光譜（Photoluminescence, PL）中可以觀察到兩個峰值，這兩個峰值分別為量子井發光層以及在氮化鎵（GaN）位障（barrier）表面的氮化銦鎵（InGaN）準潤濕層（quasi-wetting layer）。此外，從雙晶體Ⅹ光繞射量測（double crystal x-ray diffraction）中發現，提高GaN位障層的成長溫度，InGaN位能井和GaN位障的界面並不會被破壞。量測綠光發光二極體光電特性發現，當注入電流分別為20mA和160mA時，輸出功率分別為2mW和8.9mW。

High quality InGaN/GaN multiquantum well (MQW) light emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originated from well-sensitive emission and one originated from InGaN quasi-wetting layer on GaN barrier surface, were observed at room temperature. The observation of high order double crystal x-ray diffraction satellite peaks indicates that the interfaces between InGaN well layers and GaN barrier layers were not degraded as we increased the growth temperature of GaN barrier layers. With a 20mA and 160mA current injection, it was found that the output power could reach 2.2mW and 8.9mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.