奈米磁線的製作與特性分析

奈米結構及奈米尺寸的薄膜特性，與一般巨觀的塊材性質有很大的差異。隨著製程與量測技術的進步，奈米等級的薄膜研究也隨之快速發展。其中，結合奈米與磁性材料的研究，由於磁性記憶元件（Magnetic Random Access Memory, MRAM）及自旋電子（Spintronics）元件的未來性，而深受期待。Spintronics可解決線寬不斷縮小所導致電子傳輸的熱效應限制。Spintronics最具前景的，是用Spin Up及Spin Down來區別0與1進而應用磁性於邏輯電路。此外，根據Quantum Cellular Automata的概念，磁性薄膜的線形圖案可以用磁光讀出不同的電壓差來區別0與1，用於邏輯電路。磁性材料也多用現代工業。依據磁性材料功能分類：透過磁場極易磁化的磁蕊材料；可連續產生磁場的永久磁鐵；可改變磁化方向以利資訊存錄的磁性存錄材料；利用光能執行存錄及重放的光磁存錄材料；可利用磁場改變電阻的磁（性電）阻材料，及透過磁化使之伸縮的磁致伸縮（Magneto-Stricion），可任意改變形狀的磁性流體等。本報告運用濺鍍，微影曝光，及電子束等圖案化技術，製備磁性線形薄膜樣品，研究磁阻（MR）與磁力圖像。我們發現透過樣品設計：改變磁性線形薄膜的幾何排列，可以得到不同的磁疇結構，並在磁化過程中，改變磁區翻轉機制。

Based on advanced manufacturing and innovative measurement, we can explore the properties of nanometer-sized magnetic thin film wires, which are the most important topic for both research and industrial application in these days. One of its latent products is the MRAM (Magnetic Random Access Memory). Moreover, the next generation star product: Spintronics is also an extended application of nano magnetic thin films. We've shown the property of patterned magnetic thin film wires, and illustrates the process of manufacturing and measurements. The geometry arrangement has changed the domain structure in patterned magnetic thin film wires, and the magneto-resistance behavior also has been influenced during magnetization by the patterned design.