具電流侷限分佈發光二極體之製法

本文以濕氧化技術研製具DBR結構之發光二極體（LED），得到具電流侷限（Current Blocking）分佈之發光二極體。LED元件經適當濕氧化（Wet Oxidation）條件，可以有效地侷限LED電流分佈，並藉由將P型電極設計成環狀，使得LED晶粒的發光強度不會被電極阻擋。由實驗結果得到，使用濕氧化的技術可以有效提高(AlxGa1-x)0.5In0.5P LED的發光亮度。

The current blocking effect with Distributed Bragg Reflector (DBR) structure of (AlxGa1-x)0.5In0.5P light emitting diodes (LED) was proposed by using wet oxidation technology. By the optimal wet oxidation conditions, it can confine the current distribution through the p-n junction into the LED's periphery contact ring center region effectively and also improve the light emitting diodes brightness.