射頻磁控測鍍法製備AI2O3陶金薄膜及其特性分析

本研究以射頻磁控濺鍍陶金薄膜。探討鎳/二氧化鋁陶金薄膜（cermet thin film）在不同自我加熱（self heating）溫度下導電率與電熱性質，將鎳（1×1×0.1 cm3）的方型薄片對稱貼於氧化鋁（直徑5cm厚度0.5cm）上成一複合靶，在氬氣氣氛下濺鍍並藉由改變鎳片貼覆的數目，製備不同鎳含量的鎳/二氧化鋁陶金薄膜。所製備的薄膜試片著重於材料性質以及電熱效應分析，於不同溫度（25℃至100℃）效應下進行對導電率及加熱能量的量測，藉以探討薄膜中鎳含量的增加對金屬/絕緣體性質變遷的影響。此外，將不同鎳原子百分比的鎳/二氧化鋁陶金薄膜以焦耳加熱（joule heating）方式在大氣下加熱到700K，使用場發射電子顯微鏡（FESEM）觀察薄膜表面變化以及低角度X光繞射（XRD）觀察薄膜的相變化，研究發現濺鍍之薄膜在加熱過後具有晶粒聚集、再結晶及氧化鎳的產生。根據薄膜所表現的電阻和電性，我們探討薄膜厚度、不同鎳含量對鎳/二氧化鋁陶金薄膜溫度電阻係數（temperature coefficient of resistance, TCR）之影響，使鎳/二氧化鋁陶金薄膜能運用於溫度感測元件與微型加熱元件的領域上。

Ni/Al2O3 cermet thin films have been fabricated by rf magnetron sputter deposition, and characterized under self-heating. A composite target, consist of small Ni sheets (1×1×0.1cm3) on Al2O3 plate (dia. 5cm) was used. The sputtering was carried out in Ar atmosphere. The Ni/Al2O3 cermet thin films with different Ni atomic percents were prepared on (100) Si substrates. By changing the number of nickel sheets, the Ni atomic percents in the films can be controlled. Resistivity values for the films with different Ni atomic percents were measured within a period of temperature (25°C to 100°C), and the temperature coefficient of resistivity (TCR) was calculated. It was found that the film properties changed from metal to insulator with the decrease of Ni percents. The surface morphology and microstructures of as-deposited and air annealed (700 K) thin films were observed by scanning electron microscope (SEM). The film crystallography was characterized by grazing angle X-ray diffraction (XRD). The feasibility of applying the the Ni/Al2O3 cermet films on thermal sensors and mico-heating devices was discussed.