Organic thin-film transistors with N2 doping

In this study, the doping method was used in organic thin-film transistors based on pentacene to increase the mobility of organic thin film. The two layers structure was adopted in this study like Fig, 1. Nitrogen was used as dopant added in the doping layer at room temperature and 70°C respectively. The mobility of devices with nitrogen doping layer was enhanced by two and four times at room temperature and 70°C respectively than ones without doping layer. Although the mobility was enhanced by nitrogen doping, the ratio of on/off current was decreased with adding dopant. The best mobility of the devices was 0.69 cm2/V*s which was doped at 70°C.