金屬誘發結晶法製作多晶矽薄膜之研究

本實驗以雷射輔助電漿激發式化學氣相沉積系統（Laser-Assisted PECVD; LAPECVD）在二氧化矽（SiO2）／矽（Si）基板上成長非晶矽薄膜，再利用鎳(Ni)金屬誘發的方式使沉積的非晶矽（a-Si）薄膜經低溫退火產生結晶。探討矽結晶的型態與可能的形成機制。並證明LAPECVD可有效的改善沉積薄膜的特性，使薄膜結晶所需的熱處理時間可以明顯的縮短，且在室溫下成長非晶矽薄膜可大幅降低製程的熱預算（thermal budget）。

This study presents the deposition of amorphous silicon(a-Si) thin film on SiO2/Si substrate by CO2 laser-assisted plasma enhanced chemical vapor deposition system(LAPECVD). The a-Si thin films crystallize using nickel-induced crystallization method with low annealing temperature. This study proves that the CO2 laser assistance effectively improves the quality of thin-film deposition, shortens the annealing time of crystallization, and reduces the thermal budget of fabrication.