分子束磊晶成長氮化鎵奈米柱於矽（111）基板

氮化鎵奈米柱成功的在N-rich環境下以分子束磊晶法成長於矽（111）基板上，奈米柱的成長沒有使用任何的催化劑輔助，而是使用氮化鎵緩衝層加以調控。掃瞄式電子顯微鏡觀察到這些奈米柱均垂直於基板，奈米柱突出表面的長度為200～400nm，寬度為20～80nm，密度約為107 cm2，x光繞射分析顯示其為纖鋅礦（wurtzite）結構，且奈米柱長度的方向即為c軸方向。低溫光致螢光光譜量測顯現出兩個主要峰值，其一在3.464 eV為近能帶邊緣放射，另一在3.416 eV則是來自於奈米柱的表面態。

GaN nanorods are successfully grown on Si(111) substrate by molecular-beam epitaxy at N-rich condition. No catalyst is used to enhance the nanorods growth. Scanning electron microscopy shows that the nanorods are vertically to the substrate. The height, width, and density of nanorods are 200 ~ 400 nm, 20 ~ 80 nm, and 107 cm-2, respectively. X-ray diffraction shows that the nanorods structure is a wurtzite structure. The nanorod length direction is the c-axis direction. Low temperature photoluminescence spectroscopy shows two main peaks. One is the near band edge emission at 3.464 eV, and the other is from the surface states of the nanorods at 3.416 eV.