Investigation of optical mechanisms for silicon nanostructure embedded in silicon nitride grown by laser assistance

The photoluminescence (PL) property of silicon quantum dots (Si QDs) embedded in silicon nitride films grown by using NH3 and SiH4 gases at room temperature by laser assisted plasma enhanced chemical vapor deposition system were measurement. The peak position of PL could be controlled in the wavelength range from 450 to 700 nm by adjusting the NH3 gas flow rate, and the PL intensity was very strong and could be observed with the naked eye at room temperature. The PL wavelength of the samples grown with laser assistance is longer than that without laser assistance, and the PL intensity was enhanced by laser assistance. From PL and FTIR measurements, we concluded that the QDs structure could be improved by CO2 laser assistance.