控制氧氣流量探討氧化鋅錫薄膜電晶體之研究

Controlling the flow of oxygen to explore the study of zinc tin oxide thin film transistors

本研究討論在射頻濺鍍腔體內，控制氬氣氧氣比(Ar:O2)，沉積氧化鋅錫(ZTO)薄膜，透過厚度、穿透率找到最佳條件。接著使用二氧化鉿(HfO2)作為絕緣層，製成氧化鋅錫(ZTO)電晶體，藉由測量電性進行材料分析，發現利用氮氧比為45:5的ZTO薄膜製作而成的薄膜電晶體，有很好的飽和區，臨界電壓為1.26V。
我們發現氧氣含量越高時，薄膜的穿透率會越來越高，在可見光的波長間穿透率有85%。再透過量測霍爾效應看出45:5的條件下有較好的載子濃度6.45x1011。原因是在氧氣濃度高的情況下，許多的氧空缺被填滿，改善了載子濃度過高的問題，進而達到飽和且截止的功能。

This study discusses in the RF sputtering chamber, controlling the ratio of argon to oxygen (Ar:O2), depositing zinc tin oxide (ZTO) film, and finding the best conditions through thickness and penetration.Then use hafnium dioxide (HfO2) as an insulating layer to make zinc tin oxide (ZTO) transistors. By measuring the electrical properties for material analysis, it is found that the thin film made of ZTO film with a nitrogen-to-oxygen ratio of 45:5 is used. The crystal has a good saturation zone and the critical voltage is 1.26V.We found that the higher the oxygen content, the higher the penetration rate of the film, and the penetration rate between visible light wavelengths is 85%. Through the measurement of the Hall effect, it can be seen that the carrier concentration is 6.45x1011 under the condition of 45:5. The reason is that in the case of high oxygen concentration, many oxygen vacancies are filled, which improves the problem of excessive carrier concentration, and then achieves the function of saturation and cut-off.