本研究使用氧化鋅錫(ZTO)製造光感測器，藉由測量感應電流進行分析及探討，我們發現使用氬氧比為48:2的ZTO薄膜製作而成的光感測器，有最大的光響應度為5.608ሺ𝑚𝐴/𝑊ሻ，並且在退火溫度為300℃時加熱30分鐘，所呈現出的光響應度較為穩定ሺ0~2𝑚𝐴/𝑊ሻ。可以證明退火能有效地使氧空缺消除，讓氧氣濃度不再造成過大的差異性。另外本次研究所使用的光波長為380nm，屬於紫外光區域，所以此研究成果有做成紫外光感測器(UV PD)的可能性。

This research is making photodetectors with zinc tin oxide (ZTO). By measuring the induced current for analysis and discussion, we found that the photodetectors made of ZTO thin film with an argon-oxygen ratio of 48:2 have maximum photo responsivity of 5.608ሺ𝑚𝐴/𝑊ሻ, and when the annealing temperature is 300℃ for 30 minutes, the photo responsivity exhibited is relatively stable ሺ0~2𝑚𝐴/𝑊ሻ. It proved that annealing can effectively eliminate oxygen vacancies so that the oxygen concentration will no longer cause excessive differences. In addition, the wavelength of the photocurrent used in this research is 380nm , which belongs to the ultraviolet region. Therefore, this research result has the possibility of making ultraviolet photodetectors (UV PD).