In this paper, Y2O3 was evaluated as a gate insulator for thin film transistors fabricated using an amorphous InGaZnO (α-IGZO) active layer. The leakage current density for the Y2O3 film prepared under the optimum conditions was observed to be ~1.5 × 10-8 A/ cm2 at an electric field of 1 MV/cm. The RMS roughness of the Y2O3 film was improved from 0.330 nm to 0.216 nm by employing an RF (magnetron sputtering). Using the optimized Y2O3 deposition conditions, the IGZO thin film transistors (TFTs) were fabricated on a glass substrate. The optimal structure of the Y2O3/IGZO TFT was obtained.
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