In response to the high demand for the market applications, the development of etching technology has become more diverse. In recent years, various new etching techniques for the anisotropic etching had been developed, such as the metal-assisted chemical etching. In this study, the reaction mechanism of metal-assisted chemical etching is investigated by altering the etching conditions, such as the temperature and the concentrations of potassium permanganate and sulfuric acid. From the experimental results, it shows that the gallium arsenide without gold-coated would be ionized by the potassium permanganate. Under an annealing temperature of 400°C with gold-coated, the reactions of the metal-assisted chemical etching emerge in the gallium arsenide substrate. However, at a low temperature condition the deposited gold might play a role of a resist-mask. Without a thermal annealing treatment, it is found that the reaction of metal-assisted chemical etching occurs only at the interface between the semiconductor substrate and the metal particle. Based on these experiment observations under different etching conditions, the etching mechanisms of the metal-assisted chemical etching are revealed to help in understanding and controlling this technology.
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