| 中文摘要 |
先進封裝中的微凸塊銲料接點需有效降低脆性介金屬化合物於接合介面之厚度。因此,尋找能同時抑制介面介金屬化合物生成並具備良好潤濕性之阻障層材料,成為重要的研究課題。本文回顧FeCoNi(Mn,Cu)多元合金於Sn基無鉛銲點之界面行為:FCNC賦予< 20°潤濕性,並形成約0.7μm厚之(Fe, Co, Ni, Cu)Sn2介金屬化合物層,惟高Cu含量會誘發(Cu,M)6Sn5生成與粗化;FCNM結合SA3.5及Sn-58Bi銲料時,僅分別生成約0.8μm及0.13μm的介面介金屬化合物層。此外,SA3.5/FCNM於抵抗熱遷移方面亦展現相當優異之效果。憑藉其高熵-晶格扭曲效應、sluggish diffusion特性以及較高熔點組成,FeCoNi(Mn,Cu)多元合金能有效降低元素通量、延緩介金屬化合物成長,以保留焊料體積,同時維持良好潤濕性。透過Cu含量與銲料組成之優化,可構築具長壽命、低阻抗之3D IC及FOWLP微凸塊互連,為取代傳統Ni/Au UBM提供一可行之新途徑。 |
| 英文摘要 |
In advanced packaging, it is crucial to effectively reduce the thickness of brittle intermetallic compounds (IMCs) at the solder joint interfaces of micro-bumps. Therefore, identifying diffusion barrier materials that can simultaneously suppress IMC formation while maintaining excellent wettability has become an important research objective. This review focuses on the interfacial behavior of FeCoNi(Mn,Cu) multi-element alloys with Sn-based lead-free solders. FCNC exhibits a wettability of less than 20°and forms an approximately 0.7μm thick (Fe, Co, Ni, Cu)Sn2 IMC layer; however, a high Cu content tends to promote the formation and coarsening of (Cu,M)6Sn5. In contrast, when FCNM is combined with SA3.5 or Sn-58Bi solders, the resulting interfacial IMC layers are significantly thinner, approximately 0.8μm and 0.13μm, respectively. Moreover, SA3.5/FCNM demonstrates outstanding resistance to thermomigration. Benefiting from high-entropy lattice distortion, sluggish diffusion characteristics, and a higher melting point composition, FeCoNi(Mn,Cu) multi-element alloys can effectively reduce elemental flux, retard IMC growth, and preserve solder volume while maintaining excellent wettability. Through optimization of the Cu content and solder composition, it is possible to construct long-lifetime, low-impedance 3D IC and FOWLP micro-bump interconnections, offering a promising alternative to traditional Ni/Au UBM structures. |