基於CVD生長的大面積MoS₂/WSe₂單晶片三維整合互補式反相器

Monolithic 3D Integrated Complementary Inverter Based on Large-Area CVD-Grown MoS₂and WSe₂

這項研究展示了一種基於單層n型MoS₂薄膜和p型WSe₂片材的單晶片三維整合(M3D)互補反相器。使用化學氣相沉積(CVD)技術合成了大面積、高品質的MoS₂和WSe₂層，並通過半導體行業兼容的低溫製程實現了其垂直整合。實驗中，MoS₂NMOS和WSe₂PMOS元件的開關電流比均超過10⁶，整合互補式反相器在2 V的工作電壓（VDD）下達到約9.5的電壓增益，並展現出超低功耗。透過高解析度透射電子顯微鏡分析，證實了元件層間的異質界面保持清晰，沒有出現元素間的擴散。此外，統計結果顯示元件具有良好的均勻性和可靠性，表明適用於大面積應用。此項研究為2D材料在未來高性能積體電路中的應用提供了新思路，展示了以TMD材料取代矽基電晶體的可行性。

This study demonstrates a monolithic three-dimensional (M3D) integrated complementary inverter based on monolayer n-type MoS₂films and p-type WSe₂flakes. Large-area, high-quality MoS₂and WSe₂layers were synthesized using chemical vapor deposition (CVD) technology and vertically integrated through a semiconductor industry-compatible low-temperature process. In the experiments, the MoS₂NMOS and WSe₂PMOS devices achieved on/off current ratios exceeding 10⁶, and the integrated inverter reached a voltage gain of approximately 9.5 at a VDD of 2 V, demonstrating ultra-low power consumption. High-resolution transmission electron microscopy (HR-TEM) confirmed that the