| 英文摘要 |
The GeTe thermoelectric (TE) material emerges as a promising contender against PbTe and SnTe, despite the intricate challenge of manipulating its intrinsic carrier density and phase transition characteristics. This study presents a compelling discourse showcasing the heightened TE performance of GeTe through Sb donor doping. Notably, a remarkable zT value exceeding 1.4 at 623K is established, a feat attributed to the strategic suppression of thermal conductivity and the concurrent elevation of the power factor. These advancements are orchestrated by the deliberate adjustment of the phase transition temperature within the Ge0.9TeSb0.1 composite. The seamless equilibrium between cation-anion entities and charge neutrality at the crystallographic sites induces the creation of a vacancy, achieved by substituting an equimolar amount of Sb3+ for Ge2+. This deliberate introduction of vacancies leads to an augmented concentration of Ge vacancies, thereby fostering the dissolution of Ge precipitates within the intricate matrix. This, in turn, orchestrates a reduction in hole density. The judicious integration of Sb/Ge substitution further drives the diminution of hole density, facilitating a harmonious optimization of carrier density. Notably, the strategic incorporation of point defects, encompassing vacancies and substitutions, profoundly scatters phonons, engendering a substantial decline in lattice thermal conductivity. This consequential decline serves to effectively restrain the amplitude of the amorphous limit. In effect, the investigation delves deeper into the intricate interplay between Sb doping and electron-phonon interactions within GeTe-based materials. This newfound understanding constitutes a valuable framework for achieving significant milestones not only in GeTe-based systems but also in other thermoelectric materials. |
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