以仲鎢酸銨成長二維單層二硫化鎢

Growth of 2D Tungsten Disulfide Monolayer Using Ammonium Paratungstate

二維過渡金屬二硫族化物由於具有半導體特性、單層及多層能隙差異、可調控之載子遷移率、可撓性及高透光性等特性，在近年來被廣泛研究並展現出相當大的應用潛力。其中，如何有效透過調控成長參數，來進行大面積及層數可控的成長，將決定此類材料在未來能否具有突破性的研究進展。在本研究中，我們選擇仲鎢酸銨替代常用的三氧化鎢來作為成長二硫化鎢之前驅物以合成二維二硫化鎢樣品。透過原子力顯微鏡，拉曼光譜和光致發光光譜我們可證實樣品為單層，而在參數最佳化的樣品中最大的晶粒尺寸可達約20μm。因此，我們提供了一種不同的前驅物選擇，可節省生產高純度前驅物過程所需的能量並降低成本，同時具備了量產的潛力。

2D transition metal dichalcogenides have attracted extensive attention in recent years due to their intriguing features including semiconducting properties, tunable bandgap and mobility, flexibility, and high transparency. The potential of these materials for future applications largely relies on the strategies to effectively control the growth parameters for achieving large size and layer tunable material growth. In this work, ammonium paratungstate (APT) has been selected as an alternative precursor for replacing WO3 to synthesize 2D WS2. Monolayer triangular WS2 flakes up to 20μm have been successfully grown and confirmed by atomic force microscopy, Raman spectra, and photoluminescence spectra. As a result, the growth process reported herein provides a practical and feasible solution for low cost and efficient synthesis of WS2 for practical applications.