| 英文摘要 |
This study attempts to alter the film surface roughness and angle of the elongated columnar structure through evaporating silicon dioxide (SiO2) depositing in a particular angle onto the indium-tin oxide (ITO) substrate. The alteration of this developed structure could help to improve the alignment of liquid crystal (LC), a method that not only serves to improve the shortcoming of the contact method but the oblique evaporation also provides an opportunity to reinvent a known technology into a new generation aligned technology. |