| 英文摘要 |
We have successful implement a new way to adjust the work function of indium tin oxide (ITO), which is proved to be a stable way since it only concerns to the partial pressure of the controllable purging gases. With this new method, the work function can increase for more than 0.3eV. Consider the ordinary ionization potential (IP) of the hole transportation layer which is from 5.35 to 5.8 eV, the increase of ITO work function can reduce the barrier from 40% to 70%. |
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