氮化鎵／氮化矽雙緩衝層之高可靠度氮基礎發光二極體

以有機金屬化學氣象沉積在藍寶石基板上成長由單一氮化鎵成核層與氮化鎵/氮化矽雙緩衝層所形成的兩種不同氮基礎的多層量子井發光二極體結構。在氮化矽緩衝層表面可以發現許多奈米尺寸大小的孔洞，其特性相信可提升之後氮化鎵側向的磊晶成長。此外，如果氮化鎵／氮化矽雙緩衝層合併於磊晶結構中，此氮基礎的發光二極體其可靠度被證實可以有實質上的改善。

Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.