具有氮化銦鎵／氮化鎵自組式量子點的藍色發光二極體

我們使用有機金屬化學氣相沉積法並利用中斷成長的方式成功地製造出具有多層量子點結構的氮化銦鎵/氮化鎵活性區之藍色發光二極體，其中在量子阱的結構中量子點的高度為3nm，寬度則為10nm。我們發現隨著注入電流從3mA到50mA的增加，得到的電致發光譜（electroluminescence, EL）峰值的位置會有68.4 meV的巨大藍移量。造成此一明顯的EL藍移量可能是量子點導致激子（exciton）的深侷限，注入的電流增加時強化了能帶填滿效應（band-filling effect）所致。

InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) active layers were successfully fabricated by using an interrupted growth method in metal-organic chemical vapor deposition (MOCVD). We have successfully formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. It was found that a huge 68.4-meV blue shift in electroluminescence (EL) peak position as the injection current is increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs will strengthen band-filling effect as the injection current increases.