Novel Low-temperature-grown GaAs Based Photodiode for High-Speed/ Power Performance by Use of Molecular-Beam-Epitaxy (MBE) Grown Technique

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篇名	Novel Low-temperature-grown GaAs Based Photodiode for High-Speed/ Power Performance by Use of Molecular-Beam-Epitaxy (MBE) Grown Technique
作者	許弘錢、許晉瑋、黃凡修、劉維昇、綦振瀛、呂佳諭、孫啓光、潘犀靈
英文摘要	Photodiodes with high saturation power and high responsivity performance attract lots of attention due to their applications in modern fiber communication system. In this paper, we demonstrate a novel epilayer structure of photodiode: Separated-Transport-Recombination photodiode (STR-PD), which is grown by Molecular-Beam-Epitaxy (MBE) technique.
起訖頁	7-10
刊名	真空科技
期數	200512 (18:3期)
出版單位	台灣真空學會（原：中華民國真空科技學會）
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